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71V3556SA166BQ

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BQ

包裝：卷帶（TR） 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V3556SA166BQ8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BQG

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BQG8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BQGI

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BQGI8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BQG

包裝：卷帶（TR） 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V3556SA166BQG8

包裝：卷帶（TR） 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V3556SA166BG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BGG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BGGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA166BGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    71V3556SA166BQ

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    卷帶（TR）

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR（ZBT）

  • 存儲(chǔ)容量：

    4.5Mb（128K x 36）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    165-TBGA

  • 供應(yīng)商器件封裝：

    165-CABGA（13x15）

  • 描述：

    IC SRAM 4.5MBIT PAR 165CABGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT, Integrated Device Technol
21+
96-TFBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
RENESAS(瑞薩)/IDT
2117+
CABGA-165(13x15)
315000
136個(gè)/托盤(pán)一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
 詢價(jià)
IDT
20+
BGA-165
136
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開(kāi)票!
 詢價(jià)
RENESAS(瑞薩)/IDT
2021+
CABGA-165(13x15)
499
詢價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
RENESAS(瑞薩)/IDT
23+
CABGA165(13x15)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
RENESAS(瑞薩)/IDT
23+
CABGA165(13x15)
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤(pán)
 詢價(jià)
更多71V3556SA166BQ供應(yīng)商 更新時(shí)間2024-12-29 13:01:00

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