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ADM30P10E

Marking：ADM30P10E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●ReliableandRugged ●100%EASGuaranteed

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛(ài)德微愛(ài)德微(深圳)電子有限公司

ADM30P10Q

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●ReliableandRugged ●100%EASGuaranteed

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛(ài)德微愛(ài)德微(深圳)電子有限公司

AP30P10GH-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP30P10GI

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP30P10GP-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP30P10GS

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

CED30P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-30A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED30P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-27A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=92mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED30P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-29A,RDS(ON)=55mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=60mW@VGS=-4.5V. Switchedmode

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU30P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-27A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=92mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ADI
2023+
ADI
8700
原裝現(xiàn)貨
 詢價(jià)
AD
SSOP
20
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
AD
17+
SSOP
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢價(jià)
AD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
ADI/亞德諾
SSOP16
6698
詢價(jià)
ADI/亞德諾
21+
原封裝
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
AD
24+
9000
5000
原裝現(xiàn)貨
 詢價(jià)
AD
23+
SSOP
20000
全新原裝假一賠十
 詢價(jià)
ADI/亞德諾
22+
66900
原封裝
 詢價(jià)
AD
23+
QFN
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多ADM30P10E供應(yīng)商 更新時(shí)間2025-2-1 15:00:00

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