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AN605中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

AN605
廠商型號

AN605

功能描述

Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit

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101.06 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

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更新時間

2025-1-20 23:00:00

AN605規(guī)格書詳情

INTRODUCTION

Power MOSFETs have become the standard choice as the main switching device for low-voltage (

There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental basis of the device structure before the MOSFET behavior can be explained. This application note details the basic structure of the Trench MOSFET structure, identifying the parasitic components and defining related terminology. It also describes how and why the parasitic parameters occur.

產(chǎn)品屬性

  • 型號:

    AN605

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

  • Basics:

    Understanding MOSFET Characteristics Associated With The Figure of Merit

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