首頁 >AN8958SSMTXL>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AN8958SSMTXL | 包裝:卷帶(TR) 封裝/外殼:SOT-665 類別:集成電路(IC) 可編程定時器和振蕩器 描述:IC OSC XTAL SSMINI-5 | PanasonicElectronicComponents Panasonic Electronic Components | PanasonicElectronicComponents | |
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES 30V,21A,RDS(ON)=26mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. -30V,-16A,RDS(ON)=46mW@VGS=-10V. RDS(ON)=77mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ●30V,5.3A,RDS(ON)=35mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. -30V,-4.0A,RDS(ON)=65mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandin | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChanelandN-ChannelMOSFETuseadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
DualEnhancementModeFieldEffectTransistor FEATURES ■30V,6.8A,RDS(ON)=28m?@VGS=10V. RDS(ON)=42m?@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58m?@VGS=-10V. RDS(ON)=85m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
DualN&P-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
NP-ChannelMOSFET Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
NP-ChannelMOSFET Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
DualN&P-ChannelPowerTrenchOMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DualNandP-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateressitanceandyetmaintainsuperiorswitchingperformance. F | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DualN&P-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DualN&P-ChannelPowerTrench?MOSFETQ1-N-Channel:30V,6.4A,26m廓Q2-P-Channel:-30V,-4.5A,51m廓 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DualN&P-ChannelPowerTrenchMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
Highoutputpower:1.5mW,pigtailtype Laserdiode Highoutputpower:1.5mW,pigtailtype Features ●Highoutputpower:1.5mW ●High-speedresponse:1.25GbpsMax. ●1.3μmFP(Fabry-perot)laser Applications ●Opticalfibercommunications | HAMAMATSUHamamatsu Photonics Co.,Ltd. 濱松光子濱松光子學(xué)株式會社 | HAMAMATSU | ||
DualN&P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperfo | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVO Qorvo, Inc | QORVO | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVO Qorvo, Inc | QORVO |
產(chǎn)品屬性
- 產(chǎn)品編號:
AN8958SSMTXL
- 制造商:
Panasonic Electronic Components
- 類別:
集成電路(IC) > 可編程定時器和振蕩器
- 包裝:
卷帶(TR)
- 類型:
振蕩器 - 晶體
- 電壓 - 供電:
2.6V ~ 5.5V
- 工作溫度:
-30°C ~ 80°C
- 封裝/外殼:
SOT-665
- 供應(yīng)商器件封裝:
SS迷你型-5D
- 安裝類型:
表面貼裝型
- 描述:
IC OSC XTAL SSMINI-5
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Panasonic/松下 |
24+ |
SOT-353SOT-323-5 |
12500 |
新進庫存/原裝 |
詢價 | ||
PANASONIC |
2016+ |
SOT353 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
Panasonic-SS |
23+ |
5-SSMINI |
65600 |
詢價 | |||
Panasonic Electronic Component |
21+ |
SS迷你型-5 |
56200 |
一級代理/放心采購 |
詢價 | ||
Panasonic |
24+ |
SSMINI-5 |
3724 |
優(yōu)勢現(xiàn)貨 |
詢價 | ||
PANASONIC |
20+ |
SSMini-5 |
9854 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
PANASONIC/松下 |
23+ |
SOT453 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Panasonic Electronic Component |
22+ |
SSMini5 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Panasonic Electronic Component |
21+ |
SSMini5 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Panasonic Electronic Component |
23+ |
SSMini5 |
9000 |
原裝正品,支持實單 |
詢價 |
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