精品国产亚洲一区二区三区在线观看 ,亚洲视频自拍

首頁 >APT904RAN>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
APT904RAN	文件：310.24 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
APT904RBN	文件：361.22 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
APT904RCN	文件：298.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
APT904RDN	文件：328.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
APT904RGN	文件：297.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AR904	文件：167.27 Kbytes Page：4 Pages	RECTIFIERDIODE Repetitivevoltageupto2900V Meanforwardcurrent1230A Surgecurrent10.1kA	POSEICO Power Semiconductors	POSEICO
AT-904	文件：81.63 Kbytes Page：3 Pages	StriplineMountingFixedAttenuators(DCto8GHz)	HIROSEHirose Electric Company 廣瀨日本廣瀨電機株式會社	HIROSE
BF904	文件：303.6 Kbytes Page：14 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904	文件：111.29 Kbytes Page：16 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF904	文件：309.91 Kbytes Page：14 Pages	N-channeldualgateMOS-FETs	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904A	文件：114.5 Kbytes Page：16 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF904A	文件：308.77 Kbytes Page：15 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904A	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904AR	文件：308.77 Kbytes Page：15 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904AR	文件：114.5 Kbytes Page：16 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF904AR	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904AWR	文件：114.5 Kbytes Page：16 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BF904AWR	文件：308.77 Kbytes Page：15 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904AWR	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp
BF904R	文件：303.6 Kbytes Page：14 Pages	N-channeldualgateMOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES	nxpNXP Semiconductors 恩智浦恩智浦半導體公司	nxp

12 3 >>>

供應商	型號	品牌	批號	封裝	庫存	備注	價格
瀚佳科技(深圳)有限公司	APT904RBN	APT	24+	TO-247	2050	公司大量全新原裝正品隨時可以發(fā)貨	詢價
深圳市興燦科技有限公司	APT904RBN	APT	24+	TO-247	1499		詢價
貿(mào)澤芯城（深圳）電子科技有限公司	APT904RBN	ISC/固電	23+	TO-3PN	30011	原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳	詢價
深圳市勝彬電子有限公司	APT904RBN	APT	22+	TO-247	8000	原裝正品支持實單	詢價
深圳市創(chuàng)新跡電子有限公司	APT904RBN	APT	23+	TO-247	7300	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	APT904RBN	APT	23+	TO-247	7300	專注配單,只做原裝進口現(xiàn)貨	詢價
瑞航達科技(深圳)有限公司	APT90DR160HJ	MICROSEMI			638	原裝正品	詢價
深圳市艾宇欣科技有限公司	APT90DR160HJ	Microsemi	1942+	N/A	908	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
深圳市科雨電子有限公司	APT90DR160HJ	MICROSEMI	1809+	SOT-227	326	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市河鋒鑫科技有限公司	APT90DR160HJ	Microsemi Corporation	22+	SOT227	9000	原廠渠道,現(xiàn)貨配單	詢價

更多APT904RAN供應商更新時間2025-1-14 9:30:00

相關規(guī)格書

相關庫存