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BAW101S-Q

Marking：K2；Package：TSSOP6；High voltage double diode

1.Generaldescription TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanar technologyandencapsulatedinasmallSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Highswitchingspeed:max.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BAW101V

HIGHVOLTAGEDUALSWITCHINGDIODE

Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325VforSingleDiodeor 650VforSeriesConnection ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250V

DIODES

Diodes Incorporated

BB-101

BaseboardforTMCM-101

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB101C

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101CAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101M

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101MAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BBP-101

BandpassFilter

MINI

Mini-Circuits

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Nexperia USA Inc.
25+
6-TSSOP SC-88 SOT-363
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
NXP/恩智浦
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NXP/恩智浦
24+
SOT-363
60000
詢價(jià)
PHILIPS/飛利浦
24+
NA/
2250
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢價(jià)
PHI
25+
SOT143
2250
原裝正品,假一罰十!
 詢價(jià)
VISHAY/威世通
24+
N/A
9480
公司現(xiàn)貨庫(kù)存,支持實(shí)單
 詢價(jià)
PHILIPS/飛利浦
04+
SOT143
1000
進(jìn)口原裝現(xiàn)貨假一賠萬(wàn)力挺實(shí)單
 詢價(jià)
Diodes
22+
SOT563
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Diodes
21+
SOT563
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
DIODES
25+23+
SOT563
46347
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多BAW101S-Q供應(yīng)商 更新時(shí)間2025-4-27 14:52:00

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