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CEB35P10A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

TCH35P10ROJE

VeryLowInductanceDesign

OHMITEOHMITE MANUFACTURING COMPANY

歐敏歐敏電阻制造公司

TCH35P10ROJE

35WattTO220PackageThickFilmPower

OHMITEOHMITE MANUFACTURING COMPANY

歐敏歐敏電阻制造公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET/華瑞
23+
TO263
28888
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
CET
24+
TO-263
525600
詢價(jià)
CET
SOT263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價(jià)
CET
2023+
SOT263
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
CET
TO-263
22+
6000
十年配單,只做原裝
 詢價(jià)
CET
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
22+
SOT263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
更多CEB35P10A供應(yīng)商 更新時(shí)間2024-11-16 15:00:00

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