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CJD05N60B

N-Channel Power MOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJD05N60B

N -Channel P ower MOSFET

ZPSEMI

ZP Semiconductor

CJP05N60

N-ChannelPowerMOSFET

ZPSEMI

ZP Semiconductor

CJP05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJPF05N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF05N60

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJPF05N60B

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF05N60B

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJU05N60

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60

N-CHANNELPOWERMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

CJU05N60B

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJU05N60B

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

DMS05N60

N-ChannelDepletion-ModeMOSFET

BWTECH

Bruckewell Technology LTD

FMC05N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMC05N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMI05N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMP05N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV05N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applicati

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

H05N60

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60E

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

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長(zhǎng)電
22+23+
TO-251S
24598
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22+
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23664
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CJ/長(zhǎng)電
21+
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30000
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CJ/長(zhǎng)電
2022+
TO-251
50000
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CJ/長(zhǎng)電
23+
TO-251
6000
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CJ/長(zhǎng)電
2016
TO-251S
23643
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CJ/長(zhǎng)電
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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2016
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2000
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CJ
2020+
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350000
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更多CJD05N60B供應(yīng)商 更新時(shí)間2024-12-24 11:01:00

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