FAD7171MX中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The FAD7171MX is a monolithic high?side gate drive IC that can

drive high?speed MOSFETs and IGBTs that operate up to +600 V. It

has a buffered output stage with all NMOS transistors designed for

high pulse current driving capability and minimum cross?conduction.

onsemi’s high?voltage process and common?mode noise?canceling

techniques provide stable operation of the high?side driver under high

dv/dt noise circumstances. An advanced level?shift circuit offers

high?side gate driver operation up to VS = ?11 V for VBS = 15 V.

The UVLO circuit prevents malfunction when VBS is lower than

the specified threshold voltage. The high?current and low?output

voltage?drop feature make this device suitable for sustaining switch

drivers and energy?recovery switch drivers in automotive motor drive

inverters, switching power supplies, and high?power DC?DC

converter applications.

Features

? Floating Channel for Bootstrap Operation to +600 V

? 4 A Sourcing and 4 A Sinking Current Driving Capability

? Common?Mode dv/dt Noise?Cancelling Circuit

? 3.3 V and 5 V Input Logic Compatible

? Output In?phase with Input Signal

? Under?Voltage Lockout for VBS

? 8?SOIC Package, Case 751?07

(JEDEC MS?012, 0.150 inch Narrow Body)

? AEC?Q100 Qualified and PPAP Capable for Ambient Operating

Temperature from ?40°C to 125°C

Applications

? Common Rail Injection Systems

? DC?DC Converter

? Motor Drive (Electric Power Steering, Fans)