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FQPF3N80C

800V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF3N80C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FTK3N80D

3Amps,800VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK3N80F

3Amps,800VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK3N80I

3Amps,800VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK3N80P

3Amps,800VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

HFD3N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFP3N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFS3N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFU3N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HM3N80

SiliconN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

ISC3N80F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.0A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.0Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFA3N80

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFA3N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP3N80

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFP3N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

KF3N80D

NCHANNELMOSFIELD

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID=2.7A ?Drain-S

KECKEC CORPORATION

KEC株式會社

KF3N80D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID=2.7A ?Drain-S

KECKEC CORPORATION

KEC株式會社

KF3N80D/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID=2.7A ?Drain-S

KECKEC CORPORATION

KEC株式會社

KF3N80DI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS=800V,ID=2.7A ?Drain-S

KECKEC CORPORATION

KEC株式會社

詳細參數

  • 型號：

    FQPF3N80C

  • 功能描述：

    MOSFET 800V N-Ch Q-FET advance C-Series

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FSC/仙童
13+
TO-220F
10000
深圳市勤思達科技有限公司主營FSC/仙童系列全新原裝正品,公司現貨供應FQPF3N80C,歡迎咨詢洽談。
 詢價
onsemi
24+
TO-220F-3
30000
晶體管-分立半導體產品-原裝正品
 詢價
FSC
15+
原廠原裝
7000
進口原裝現貨假一賠十
 詢價
FSC
2020+
TO-220F
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
FAIRCHILD/仙童
24+
TO-220-3PF
3580
原裝現貨/15年行業(yè)經驗歡迎詢價
 詢價
ONSEMI
18+ROHS
NA
2045
全新原裝!優(yōu)勢庫存熱賣中!
 詢價
ON
21+
SOT23
1000
詢價
ON
20+
TO220
6700
全新原裝公司現貨
詢價
FAIRCHILD/仙童
21+
6000
原裝正品
 詢價
FAIRCHILD/仙童
24+
TO-220F
251
只做原廠渠道 可追溯貨源
 詢價
更多FQPF3N80C供應商 更新時間2024-12-22 11:04:00

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