FS200R12KT4R_B11分立半導體產(chǎn)品的晶體管-IGBT-模塊規(guī)格書PDF中文資料

FS200R12KT4R_B11屬于分立半導體產(chǎn)品的晶體管-IGBT-模塊。由英飛凌科技股份公司制造生產(chǎn)的FS200R12KT4R_B11晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導體器件，主要用作電子開關，兼具高效率和快速切換優(yōu)點。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進行區(qū)分。

Features

? Single-channel isolated gate driver

? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

? Up to 6.5 A typical peak output current

? 45 ns propagation delay with 7 ns part-to-part matching (skew)

? 35 V absolute maximum output supply voltage

? High common-mode transient immunity CMTI > 300 kV/μs

? Separate source and sink outputs with active shutdown and short circuit clamping

? Galvanically isolated coreless transformer gate driver

? 3.3 V and 5 V input supply voltage

? Suitable for operation at high ambient temperature and in fast switching applications

? UL 1577 certification VISO = 3.0 kV (rms) for 1 min