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G15M65DF2中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

G15M65DF2
廠商型號(hào)

G15M65DF2

功能描述

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package

文件大小

1.11098 Mbytes

頁面數(shù)量

19

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-15 12:17:00

G15M65DF2規(guī)格書詳情

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Features

? 6 μs of short-circuit withstand time

? VCE(sat) = 1.55 V (typ.) @ IC = 15 A

? Tight parameter distribution

? Safer paralleling

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Soft and very fast recovery antiparallel diode

? Maximum junction temperature: TJ = 175 °C

Applications

? Motor control

? UPS

? PFC

? General purpose inverter

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TO-3P
8560
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56000
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