HAL710SF-E中文資料ETC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

[Micronas]

Introduction

The HAL 710 is a monolithic integrated Hall-effect sensor manufactured in CMOS technology with two independent Hall plates S1 and S2 spaced 2.35 mm apart.

Features

– generation of ‘Count Signals’ and ‘Direction Signals’

– delay of the ‘Count Signals’ with respect to the ‘Direction Signal’ of 1 μs minimum

– switching type latching

– low sensitivity

– typical BON: 14.9 mT at room temperature

– typical BOFF: ?14.9 mT at room temperature

– temperature coefficient of ?2000 ppm/K in all magnetic characteristics

– switching offset compensation at typically 150 kHz

– operation from 3.8 V to 24 V supply voltage

– operation with static magnetic fields and dynamic magnetic fields up to 10 kHz

– overvoltage protection at all pins

– reverse-voltage protection at VDD-pin

– robustness of magnetic characteristics against mechanical stress

– short-circuit protected open-drain outputs by thermal shut down

– constant switching points over a wide supply voltage range

– EMC corresponding to DIN 40839

Applications

The HAL 710 is the optimal sensor for position-control applications with direction detection and alternating magnetic signals such as:

– multipole magnet applications,

– rotating speed and direction measurement, position tracking (active targets), and

– window lifters.