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HGTG20N120CN

63A, 1200V, NPT Series N-Channel IGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

HGTG20N120CND

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

HGTG20N120CND

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HM20N120AB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM20N120T

H&MNPTIGBTsofferlowerlossesandhigherenergy

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM20N120TB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

IHW20N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW20N120R

ReverseConductingIGBTwithmonolithicbodydiode

Features: ?PowerfulmonolithicBodyDiodewithverylowforwardvoltage ?Bodydiodeclampsnegativevoltages ?TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior ?NPTtechnologyoffers

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXDA20N120AS

HighVoltageIGBT

HighVoltageIGBT ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●highswitchingspeed ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●Internationalstandardp

IXYS

IXYS Corporation

IXDH20N120

HighVoltageIGBTwithoptionalDiode

HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientfor easyparalleling ●MOSinpu

IXYS

IXYS Corporation

IXER20N120

NPT3IGBTinISOPLUS247

IXYS

IXYS Corporation

IXFK20N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFK20N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.57Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFN20N120

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated

IXYS

IXYS Corporation

IXFN20N120P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?Fastrecoverydiode ?UnclampedInductive

IXYS

IXYS Corporation

IXFR20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=630mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFX20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    HGTG20N120CN

  • 制造商：

    INTERSIL

  • 制造商全稱：

    Intersil Corporation

  • 功能描述：

    63A, 1200V, NPT Series N-Channel IGBT

供應商型號品牌批號封裝庫存備注價格
Intersil
24+
TO-247
8866
詢價
INTERSIL
23+
TO-247
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INTERSIL
22+
TO-247
6000
十年配單,只做原裝
 詢價
FAIRCHILD
TO-247
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
INTERSIL
23+
TO-247
6000
原裝正品，支持實單
 詢價
INTERSIL
23+
TO-247
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
INTERSIL
23+
TO-247
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
FAIRCHILD
23+
TO-247
9526
詢價
FAIRCHILD
05+
原廠原裝
4699
只做全新原裝真實現(xiàn)貨供應
 詢價
更多HGTG20N120CN供應商 更新時間2024-12-23 16:30:00

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