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HUF75639S3R4851中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

HUF75639S3R4851
廠商型號

HUF75639S3R4851

功能描述

56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

文件大小

136.53 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-1 10:16:00

HUF75639S3R4851規(guī)格書詳情

This N-Channel power MOSFETs is manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Features

? 56A, 115V

? Simulation Models

- Temperature Compensated PSPICETM and SABER? Electrical Models

- Spice and Saber Thermal Impedance Models

- www.Intersil.com

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

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