首頁(yè) >IPB60R160C6XT>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.16? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤160m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.16? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤160m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
IPB60R160C6XT
- 制造商:
Infineon Technologies AG
- 功能描述:
MOSFET N-CH 600V 23.8A TO263
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢(xún)價(jià) | |||
INFINEON |
23+ |
7000 |
詢(xún)價(jià) | ||||
英飛凌 |
21+ |
PG-TO263-3 |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINE0N |
21+ |
PG-TO263-3 |
32568 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
2112+ |
PG-TO263-3 |
115000 |
1000個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨, |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO-263 |
47 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-263 |
10000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
22+ |
TO-263 |
50000 |
只做原裝假一罰十,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
Infineon/英飛凌 |
23+ |
20000 |
全新、原裝、現(xiàn)貨 |
詢(xún)價(jià) |
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