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IPP180N10N3

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP180N10N3G

OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD180N10N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP180N10N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA180N10N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD180N10N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD180N10N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD180N10N3G

N-channel,normallevel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI180N10N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI180N10N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    IPP180N10N3

  • 功能描述:

    MOSFET N-KANAL POWER MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
TO220-3
10000
公司只做原裝正品
詢價
Infineon
22+
TO220-3
6000
十年配單,只做原裝
詢價
Infineon
23+
TO220-3
6000
原裝正品,支持實(shí)單
詢價
Infineon/英飛凌
23+
20000
全新、原裝、現(xiàn)貨
詢價
INFINEON/英飛凌
2023+
TO-220
10000
全新原裝正品,優(yōu)勢價格
詢價
INFINEON/英飛凌
21+
TO-220
10000
公司原裝現(xiàn)貨,歡迎咨詢
詢價
Infineon
22+
TO220-3
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價
ADI
23+
TO-220
8000
只做原裝現(xiàn)貨
詢價
ADI
23+
TO-220
7000
詢價
INFINEON/英飛凌
22+
TO220-3
91507
詢價
更多IPP180N10N3供應(yīng)商 更新時間2024-11-1 10:06:00