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首頁 >IQDI614TI>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF614	文件：45.1 Kbytes Page：7 Pages	2.0A,250V,2.0Ohm,N-ChannelPowerMOSFET Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ThispowerMOSFETisdesignedforapplicationssuch	Intersil Intersil Corporation	Intersil
IRF614	文件：282.55 Kbytes Page：9 Pages	EaseofParalleling DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF614	文件：158.54 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF614	文件：296.14 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF614A	文件：200.66 Kbytes Page：2 Pages	N-ChannelMosfetTransistor ?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?LowRDS(on) ?VGSRatedat±30V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDriveRequirements	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF614B	文件：855.44 Kbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF614PBF	文件：924.75 Kbytes Page：7 Pages	hexfetpowermosfet HEXFETPowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?SurfaceMount ?EaseofParalleling ?SimpleDriveRequirements ?Lead-Free	IRF International Rectifier	IRF
IRF614S	文件：176.64 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF614S	文件：217.94 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF614SPBF	文件：1.72373 Mbytes Page：9 Pages	HEXFETPowerMOSFET HEXFETPowerMOSFET ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead-Free	IRF International Rectifier	IRF
IRF614SPBF	文件：217.94 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF614STRRPBFA	文件：217.94 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI614B	文件：649.21 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI614G	文件：173.14 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.1A) Through-HolePackags TO-220FullPak(FullyIsolated)	IRF International Rectifier	IRF
IRFI614G	文件：1.51135 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI614G	文件：282.67 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI614GPBF	文件：292.01 Kbytes Page：8 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRFI614GPBF	文件：1.51135 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI614GPBF	文件：282.67 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFS614A	文件：264.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市金芯陽科技有限公司	IQDI614TI	MURATA	2021++	0805	10000	原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15	詢價
深圳市振宏微科技有限公司	IQDKD_9.8304MHZ	N_A	23+	原廠封裝	9888	專做原裝正品,假一罰百!	詢價
深圳市聯(lián)世界科技有限公司	IQDKP26.625	IQD			3400	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
瀚佳科技(深圳)有限公司	IQDKP26.625	IQD	24+		35200	一級代理/放心采購	詢價
深圳市永貝爾科技有限公司	IQDN-10	BOWEI	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市星辰微電科技有限公司	IQE004NE1LM7	Infineon	23+	PG-TSON-8	15500	英飛凌優(yōu)勢渠道全系列在售	詢價
深圳市富安?？萍加邢薰?/a>	IQE006NE2LM5	英飛凌	21+	PG-TSON-8	6000	絕對原裝現(xiàn)貨	詢價
艾睿國際（香港）有限公司	IQE006NE2LM5	Infineon(英飛凌)	2117+	PG-TSON-8	315000	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市杰順創(chuàng)科技有限公司	IQE006NE2LM5	Infineon/英飛凌	21+	PG-TSON-8	6000	原裝現(xiàn)貨正品	詢價
深圳市珩瑞科技有限公司	IQE006NE2LM5	Infineon/英飛凌	21+	PG-TSON-8	10000	原裝,品質(zhì)保證,請來電咨詢	詢價

更多IQDI614TI供應(yīng)商更新時間2025-1-3 14:06:00

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