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IRF5852TR

Ultra Low On-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TRPBF

Ultra Low On-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852S

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國德州儀器公司

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SDW

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國德州儀器公司

ISO5852SDWR

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國德州儀器公司

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852S-EP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

ISO5852SMDWREP

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

KS5852

CMOSINTEGRATEDCIRCUIT

SamsungSamsung semiconductor

三星三星半導(dǎo)體

LC5852N

Four-BitSingle-ChipMicrocontrollerwithOn-ChipLCDDriversforSmall-ScaleControlinMedium-SpeedApplications

Overview TheLC5852Nisahigh-performancefour-bitsingle-chipbuilt-inLCDdrivermicroprocessorthatprovidesavarietyofattractivefeaturesincludinglow-voltageoperationandlowpowerdissipation.TheLC5852NwasdevelopedasanupwardlycompatibleversionoftheLC5851NandprovidesaRO

SANYOSanyo

三洋三洋電機株式會社

MAX5852

Dual,8-Bit,165Msps,Current-OutputDAC

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX5852

Dual,10-Bit,165Msps,Current-OutputDAC

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX5852ETL

Dual,8-Bit,165Msps,Current-OutputDAC

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MJE5852

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage :VCEO=-400V(Min) ·LowCollector-EmitterSaturationVoltage ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·SwitchingRegulators ·Inverters ·Solenoidandrelaydrivers ·Motorcontrol

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE5852

SWITCHMODESeriesPNPSiliconPowerTransistors

TheMJE5850,MJE5851andtheMJE5852transistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperatedswitchmodeapplicationssuchas: ?SwitchingRegulators ?Inverters ?SolenoidandR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE5852

PNPSILICONPOWERTRANSISTORS

TheMJE5850,MJE5851andtheMJE5852transistorsaredesignedforhigh?voltage,high?speed,powerswitchingininductivecircuitswherefalltimeiscritical.TheyareparticularlysuitedforlineoperatedSWITCHMODEapplications. Features ?SwitchingRegulators ?Inverters ?Solenoidan

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE5852

HIGHVOLTAGEPNPPOWERTRANSISTOR

DESCRIPTION TheMJE5852ismanufacturedusingHighVoltagePNPMulti-Epitaxialtechnologyforhighswitchingspeedandhighvoltagecapability.Itisintendedforuseinhighfrequencyandefficiencyconverters,switchingregulatorsandmotorcontrol. ■STMicroelectronicsPREFERRED SAL

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

詳細參數(shù)

  • 型號：

    IRF5852TR

  • 功能描述：

    MOSFET 2N-CH 20V 2.7A 6-TSOP

  • RoHS：

    否

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列

  • 系列：

    HEXFET®

  • 產(chǎn)品目錄繪圖：

    8-SOIC Mosfet Package

  • 標準包裝：

    1

  • 系列：

    - FET

  • 型：

    2 個 N 溝道（雙） FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    60V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    3A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    75 毫歐 @ 4.6A，10V Id 時的

  • Vgs(th)（最大）：

    3V @ 250µA 閘電荷(Qg) @

  • Vgs：

    20nC @ 10V 輸入電容(Ciss) @

  • Vds：

    - 功率 -

  • 最大：

    1.4W

  • 安裝類型：

    表面貼裝

  • 封裝/外殼：

    PowerPAK? SO-8

  • 供應(yīng)商設(shè)備封裝：

    PowerPAK? SO-8

  • 包裝：

    Digi-Reel®

  • 產(chǎn)品目錄頁面：

    1664(CN2011-ZH PDF)

  • 其它名稱：

    SI7948DP-T1-GE3DKR

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TSOP-6
25000
全新原裝現(xiàn)貨,假一賠十
 詢價
IR
24+
SOT-163SOT-23-6
27200
新進庫存/原裝
 詢價
IR
16+
原廠封裝
2462
原裝現(xiàn)貨假一罰十
 詢價
IOR
23+
SOT23-6
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IOR
21+
SOT23-6
12588
原裝正品,自己庫存 假一罰十
 詢價
Infineon Technologies
21+
6-TSOP
3000
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
INTERNATI
21+
35200
一級代理/放心采購
 詢價
IR
24+
TOSP-6
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
INFINEON
1503+
TSOP-6
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
1923+
SOT-163
35689
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
更多IRF5852TR供應(yīng)商 更新時間2024-10-25 12:44:00

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