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IRF620PBF

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRF620PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620PBF

Power MOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF620R

iscN-ChannelMOSFETTransistor

?DESCRITION ?Designedforhighspeedapplications, suchasswitchingpowersupplies,ACandDC motorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?LowRDS(on) ?VGSRatedat±20V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDriveRequirements

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF620S

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4

IRF

International Rectifier

IRF620S

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A

TEL

TRANSYS Electronics Limited

IRF620S

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620S

VishaySiliconix

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620SPBF

HEXFETPOWERMOSFET(VDSS=200V,RDS(on)=0.80廓,ID=5.2A)

IRF

International Rectifier

IRF620SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620STRL

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620STRLPBF

VishaySiliconix

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF620STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI620B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI620G

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=4.1A)

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialap

IRF

International Rectifier

IRFI620G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI620G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI620GPBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialap

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRF620PBF

  • 功能描述:

    MOSFET N-Chan 200V 5.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY
23+
TO-220
7835
保證進(jìn)口原裝現(xiàn)貨假一賠十
詢(xún)價(jià)
VISHAY
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢(xún)價(jià)
Vishay Siliconix
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢(xún)價(jià)
VISHAY
24+
TO-220
15000
全新原裝的現(xiàn)貨
詢(xún)價(jià)
VISHAY
23+
TO-220
65400
詢(xún)價(jià)
VISHAY
21+
TO-220-3
43950
原裝正品 有掛有貨
詢(xún)價(jià)
VISHAY/威世
24+
100000
只做原廠(chǎng)渠道 可追溯貨源
詢(xún)價(jià)
VISHAY
21+
43150
TO-220-3
詢(xún)價(jià)
VISHAY/威世
2021+
TO-220AB
12000
勤思達(dá) 只做原裝 現(xiàn)貨庫(kù)存
詢(xún)價(jià)
VISHAY SEMICONDUCTOR
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
詢(xún)價(jià)
更多IRF620PBF供應(yīng)商 更新時(shí)間2025-1-11 17:50:00