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IRF634FP

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF634FP

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF634N

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634N

PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NL

PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NL

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NLPBF

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NPBF

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD/仙童
23+
TO-220
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
FAIRCHILD/仙童
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FAIRCHILD/仙童
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FAIRCHILD/仙童
1535+
480
詢價(jià)
FAIRCHILD/仙童
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
FAIRCHILD/仙童
22+
TO-220
34137
只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IR
2023+
TO-220
20000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價(jià)
FAIRCHILD/仙童
07+
TO-220
523
詢價(jià)
FAIRCHILD/仙童
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
FAIRCHILD/仙童
23+
480
全新原裝,歡迎來電咨詢
詢價(jià)
更多IRF634B-TU供應(yīng)商 更新時(shí)間2025-2-27 16:03:00