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IRF9953PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
● Generation V Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Surface Mount
● Very Low Gate Charge and Switching Losses
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF9953PBF
- 功能描述：
MOSFET DUAL -30V P-CH 20V VGS MAX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
4725 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
SOIC8 |
65300 |
一級代理/放心購買! |
詢價 | ||
IR |
23+ |
SOIC8 |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
IR |
SOIC8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
22+ |
SOIC8 |
9000 |
原裝正品 |
詢價 | ||
IR |
18+ |
SOP8 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價 | ||
IR |
2022+ |
SOP-8 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
IR |
23+ |
SOIC8 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
SOIC8 |
7000 |
詢價 | |||
Infineon Technologies |
2022+ |
8-SO |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價 |
