零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFD010 | HEXFET TRANSISTORS N-CHANNEL HEXDIP 50Volts,0.20Ohm,1-WattHEXDIP | IRF International Rectifier | IRF | |
N-CHANNELPOWERMOSFET
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AVALANCHEANDdv/dtRATED
| IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?Lowdrivecurrent ?Surface-mount ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’s advancedlin | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AVALANCHEANDdv/dtRATED
| IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SurfaceMountDevices | SPSEMIStarHope 瞬雷電子上海瞬雷科技有限公司 | SPSEMI | ||
ISOTABTRIACSELECTRICALLYISOLATED [HUTSONINDUSTRIES] | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
ISOTABTRIACSELECTRICALLYISOLATED [HUTSONINDUSTRIES] | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
ISOTABTRIACSELECTRICALLYISOLATED [HUTSONINDUSTRIES] | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 |
詳細(xì)參數(shù)
- 型號(hào):
IRFD010
- 功能描述:
MOSFET N-Chan 50V 1.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
DIP-4 |
5183 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
IR |
05+ |
原廠原裝 |
4340 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
8238 |
詢價(jià) | |||
IOR |
24+ |
DIP-4P |
158 |
詢價(jià) | |||
IR |
23+ |
DIP-4 |
3100 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
雷達(dá) |
2020+ |
DIP-4 |
5200 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
1816+ |
DIP-4 |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
22+23+ |
DIP-4 |
28192 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
65480 |
詢價(jià) |
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