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IRFD020

Power MOSFET

FEATURES ?Forautomaticinsertion ?Compact,endstackable ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadva

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD020

HEXFET TRANSISTORS N-CHANNEL HEXDIP

50Volt,0.10Ohm,1-WattHEXDIP HEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedevicerugg

IRF

International Rectifier

IRFD020

Power MOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD020

Power MOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

IRFD020_V01

Power MOSFET

FEATURES ?Forautomaticinsertion ?Compact,endstackable ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadva

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD020PBF

Power MOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD020PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR020

HEXFETRPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq

IRF

International Rectifier

IRFR020

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR020

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFD020

  • 功能描述：

    MOSFET N-Chan 50V 2.4 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2020+
DIP-4
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
IR
21+
6000
原裝正品
 詢(xún)價(jià)
IR
24+
DIP4
127
只做原廠渠道 可追溯貨源
 詢(xún)價(jià)
IR
9827
206
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢(xún)價(jià)
IR
05+
原廠原裝
4365
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
IR
23+
DIP-4
8238
詢(xún)價(jià)
INTEL
23+
DIP-4
5000
原裝正品,假一罰十
 詢(xún)價(jià)
IOR
24+
DIP-4P
201
詢(xún)價(jià)
IR
23+
DIP-4
3200
全新原裝現(xiàn)貨
 詢(xún)價(jià)
IR
2020+
DIP
4300
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
更多IRFD020供應(yīng)商 更新時(shí)間2025-1-26 15:22:00

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