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IRFR4104PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR4104PBF
廠商型號(hào)

IRFR4104PBF

功能描述

HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A )

文件大小

273.67 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-31 22:30:00

IRFR4104PBF規(guī)格書詳情

AUTOMOTIVE MOSFET

Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRFR4104PBF

  • 功能描述:

    MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
INFINEON/英飛凌
2020+
NA
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
IR
24+
TO-252
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
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INFINEON/IR
1907+
NA
1275
20年老字號(hào),原裝優(yōu)勢(shì)長期供貨
詢價(jià)
IR
24+
TO252
990000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
IR
13+
TO-252
292
詢價(jià)
IR
22+23+
TO-252
27187
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
IR
DPAK
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
IR
24+
TO-252
292
只做原廠渠道 可追溯貨源
詢價(jià)
Infineon(英飛凌)
23+
TO-252
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
IR
19+
TO-252
12000
詢價(jià)