首頁(yè) >IRFU430BTU>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
N-ChannelMOSFETinaHermeticallysealedTO257ABMetalPackage. | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=500V,Rd(on)=1.5ohm,Id=4.5A) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRFU430BTU
- 功能描述:
MOSFET 500V Single
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
IPAK |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢(xún)價(jià) | ||
FSC/ON |
23+ |
原包裝原封 □□ |
6609 |
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢(xún) 庫(kù)存 |
詢(xún)價(jià) | ||
FAIRCHILD |
24+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢(xún)價(jià) | |||
FAIRCHILD/仙童 |
23+ |
36530 |
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | |||
FS |
22+ |
NA |
30000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
FSC |
22+ |
NA |
27003 |
全新原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
FAIRCHILD |
2023+ |
SMD |
5040 |
安羅世紀(jì)電子只做原裝正品貨 |
詢(xún)價(jià) | ||
VB |
21+ |
TO-251 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
I |
TO-251 |
22+ |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
VB |
TO-251 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢(xún)價(jià) |
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