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IRLZ34NSPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRLZ34NSPBF
廠商型號

IRLZ34NSPBF

功能描述

HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A )

文件大小

297.98 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-27 18:51:00

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IRLZ34NSPBF規(guī)格書詳情

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ34NL) is available for lowprofile applications.

● Logic-Level Gate Drive

● Advanced Process Technology

● Surface Mount (IRLZ34NS)

● Low-profile through-hole (IRLZ34NL)

● 175°C Operating Temperature

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

產(chǎn)品屬性

  • 型號:

    IRLZ34NSPBF

  • 功能描述:

    MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
VBsemi
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支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
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只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價(jià)