LH28F008SCR-L12中文資料夏普微數(shù)據(jù)手冊(cè)PDF規(guī)格書

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.

8M-BIT (1MB x 8) SmartVoltage Flash MEMORY

■ SmartVoltage Technology

- 2.7V(Read-Only), 3.3V or 5V VCC

- 3.3V, 5V or 12V VPP

■ High-Performance Read Access Time

- 85ns(5V±0.25V), 90ns(5V±0.5V),

- 120ns(3.3V±0.3V), 150ns(2.7V-3.6V)

■ Operating Temperature

- 0°C to +70°C

■ High-Density Symmetrically-Blocked

Architecture

- Sixteen 64K-byte Erasable Blocks

■ Low Power Management

- Deep Power-Down Mode

- Automatic Power Savings Mode

- Decreases ICC in Static Mode

■ Enhanced Data Protection Features

- Absolute Protection with VPP=GND

- Flexible Block Locking

- Block Erase/Byte Write Lockout

during Power Transitions

■ Automated Byte Write and Block Erase

- Command User Interface

- Status Register

■ Enhanced Automated Suspend Options

- Byte Write Suspend to Read

- Block Erase Suspend to Byte Write

- Block Erase Suspend to Read

■ Extended Cycling Capability

- 100,000 Block Erase Cycles

- 1.6 Million Block Erase Cycles/Chip

■ SRAM-Compatible Write Interface

■ Industry-Standard Packaging

- 40-Lead TSOP

■ ETOXTM* Nonvolatile Flash Technology

■ CMOS Process

(P-type silicon substrate)

■ Not designed or rated as radiation hardened