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M28W160BT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT1006T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT100GBT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT100-NT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT100ZB1T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT706T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT70GBT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT70-NT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT70ZB1T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT856T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT85GBT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT85-NT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT85ZB1T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT906T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT90GBT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT90-NT

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M28W160BT90ZB1T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

詳細參數(shù)

  • 型號：

    M28W160BT

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory

供應商型號品牌批號封裝庫存備注價格
ST
24+
BGA
5110
詢價
ST
23+
BGA
20000
全新原裝熱賣/假一罰十!更多數(shù)量可訂貨
 詢價
ST
24+
BGA
28500
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
ST
2021+
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ST
19+
BGA
8340
進口原裝現(xiàn)貨
 詢價
ST/意法
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
ST
BGA
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
2022
BGA
5280
原廠原裝正品,價格超越代理
 詢價
ST
22+
TSOP
7500
十年品牌!原裝現(xiàn)貨!!!
 詢價
ST
24+
BGA
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
更多M28W160BT供應商 更新時間2024-11-15 15:30:00

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