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M29W800DB70ZE6E

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29W800DB70ZE6E

8-Mbit(1Mbitx8or512Kbitsx16,bootblock)3Vsupplyflashmemory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYX

numonyx

M29W800DB70ZE6E

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29W800DB70ZE6F

8-Mbit(1Mbitx8or512Kbitsx16,bootblock)3Vsupplyflashmemory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYX

numonyx

M29W800DB70ZE6F

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29W800DB70ZE6F

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29W800DB70ZE6T

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29W800DB70ZE6T

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29W800DB70ZE6T

8-Mbit(1Mbitx8or512Kbitsx16,bootblock)3Vsupplyflashmemory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYX

numonyx

詳細(xì)參數(shù)

  • 型號：

    M29W800DB70ZE6E_NUD

  • 制造商：

    Micron Technology Inc

供應(yīng)商型號品牌批號封裝庫存備注價格
MICRON/美光
23+
TFBGA48
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MICRON/美光
23+
FBGA
26527
原盒原標(biāo),正品現(xiàn)貨 誠信經(jīng)營 價格美麗!
 詢價
Micron
17+
6200
詢價
MICRON
2016+
BGA
6523
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
ST
08+
BGA
400
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
MICRON
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
MICRON
20+
BGA48
11520
特價全新原裝公司現(xiàn)貨
 詢價
MICRON
2023+
BGA
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
MICRON
24+
BGA
35200
一級代理/放心采購
 詢價
MICRON/鎂光
24+
BGA48
2738
美光專營原裝正品
 詢價
更多M29W800DB70ZE6E_NUD供應(yīng)商 更新時間2025-2-27 11:01:00

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