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M58BW016DTZA

16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016BB

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016BBT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016BBZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016BT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016BTT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016BTZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016DB

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016DB

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016DB

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

M58BW016DB

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016DBT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016DBZA

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

M58BW016DT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016DT

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016DT

16Mbit(512Kbitx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

NUMONYX

numonyx

M58BW016DTT

16Mbit512Kbx32,BootBlock,Burst3VSupplyFlashMemories

SUMMARYDESCRIPTION TheM58BW016B/Disa16Mbitnon-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaDoubleWordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4VfortheInputandOutputbuffers.Optionally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016FB

16Mbit(512Kbx32,bootblock,burst)3VsupplyFlashmemories

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

M58BW016FB

16Mbit(512Kbitx32,bootblock,burst)

Description TheM58BW016DT,M58BW016DB,M58BW016FTandM58BW016FBare16-MbitnonvolatileFlashmemoriesthatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonadouble-wordbasisusinga2.7Vto3.6VVDDsupplyforthecircuitandaVDDQsupplydownto2.4Vfortheinp

MicronMicron Technology

鎂光美國鎂光科技有限公司

詳細參數(shù)

  • 型號:

    M58BW016DTZA

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
QFP
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
MICRON/美光
23+
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
MICRON
1844+
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
MICRON/美光
24+
NA
20000
美光專營原裝正品
詢價
MICRON/美光
22+
NA
8000
中賽美只做原裝 只有原裝
詢價
MICRON
20+
IC
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
Micron
22+
9000
原廠渠道,現(xiàn)貨配單
詢價
Micron
23+
9000
原裝正品,支持實單
詢價
Micron
23+
提供BOM配單服務(wù)
36500
原裝正品現(xiàn)貨庫存QQ:2987726803
詢價
Micron
23+
8000
只做原裝現(xiàn)貨
詢價
更多M58BW016DTZA供應(yīng)商 更新時間2024-11-18 10:36:00