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M59DR008EZB

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR008

8Mbit512Kbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR008E

8Mbit512Kbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR008EN

8Mbit512Kbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR008F

8Mbit512Kbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR008FN

8Mbit512Kbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M59DR008FZB

8Mbit512Kbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    M59DR008EZB

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
BGA
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
24+
BGA
36
詢價
ST
2020+
BGA
4500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
24+
BGA48
3629
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
 詢價
ST
0126/0125
BGA48
18425
特價銷售歡迎來電!!
 詢價
ST
2138+
BGA
8960
專營BGA,QFP原裝現(xiàn)貨,假一賠十
 詢價
-
23+
NA
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ST
2020+
BGA48
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
ST
23+
BGA
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
ST/意法
22+
BGA
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價
更多M59DR008EZB供應(yīng)商 更新時間2025-1-23 17:08:00

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