MH16S64BAMD-7中文資料三菱電機(jī)數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The MH16S64BAMD is 16777216 word X 64 bit Synchronous DRAM module. This consists of sixteen industry standard 8Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.

This is a socket type - memory modules, suitable for easy interchange or addition of modules.

FEATURES

? Utilizes industry standard 8M x 8 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP

? 168-pin (84-pin dual in-line package)

? single 3.3V±0.3V power supply

? Clock frequency 100MHz

? Fully synchronous operation referenced to clock rising edge

? 4 bank operation controlled by BA0,1(Bank Address)

? /CAS latency- 2/3(programmable)

? Burst length- 1/2/4/8/Full Page(programmable)

? Burst type- sequential / interleave(programmable)

? Column access - random

? Auto precharge / All bank precharge controlled by A10

? Auto refresh and Self refresh

? 4096 refresh cycle /64ms

? LVTTL Interface

? Discrete IC and module design conform to PC100 specification. (module Spec. Rev. 1.0 and SPD 1.2A(-7,-8), SPD 1.0(-10))

APPLICATION

PC main memory