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MT48LC32M4A2

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-75

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-75IT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-75L

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-75LIT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-7E

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-7EIT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-7EL

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-7ELIT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-8E

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-8EIT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-8EL

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FB-8ELIT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FC-75

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FC-75IT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FC-75L

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FC-75LIT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FC-7E

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FC-7EIT

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT48LC32M4A2FC-7EL

SYNCHRONOUS DRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國鎂光科技有限公司

詳細參數(shù)

  • 型號:

    MT48LC32M4A2

  • 制造商:

    MICRON

  • 制造商全稱:

    Micron Technology

  • 功能描述:

    SYNCHRONOUS DRAM

供應商型號品牌批號封裝庫存備注價格
MT
SOP
4000
正品原裝--自家現(xiàn)貨-實單可談
詢價
MT
16+
TSOP
3
全新原裝現(xiàn)貨
詢價
MICRON
2016+
TSOP
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
MT
TSOP54
4318
全新原裝進口自己庫存優(yōu)勢
詢價
MICRON
TSOP
10265
提供BOM表配單只做原裝貨值得信賴
詢價
MT
2020+
TSOP
35000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
MT
17+
TSOP54
9988
只做原裝進口,自己庫存
詢價
MICRON
19+
TSOP
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
MICRON
22+23+
New
34521
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
MICRON
18+
TSOP
15976
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
詢價
更多MT48LC32M4A2供應商 更新時間2024-12-22 10:20:00