MTD9N10E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTD9N10E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
? Replaces MTD6N10
產(chǎn)品屬性
- 型號(hào)：
MTD9N10E
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) DPAK Rail
- 功能描述：
MOSFET N D-PAK
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOT |
0231+ |
TO-252 |
2000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON/安森美 |
23+ |
NA/ |
3000 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
ON |
2020+ |
SOT252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
ON/安森美 |
22+ |
TO-251 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
ON/安森美 |
2022+ |
TO-251 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
ON/安森美 |
20+ |
TO-252 |
38560 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
ON |
2023+ |
TO-252-2 |
5425 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
ON |
2315+ |
TO-252 |
3866 |
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價(jià) | ||
ON |
23+ |
TO-251 |
3000 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
TO-252 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) |
