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NTD2955中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NTD2955
廠商型號(hào)

NTD2955

功能描述

??0 V, ??2 A, P??hannel DPAK

文件大小

124.5 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-29 15:10:00

NTD2955規(guī)格書(shū)詳情

Power MOSFET ?60 V, ?12 A, P?Channel DPAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low?voltage, high?speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.

Features

? Avalanche Energy Specified

? IDSS and VDS(on) Specified at Elevated Temperature

? Designed for Low?Voltage, High?Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes

? NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant

產(chǎn)品屬性

  • 型號(hào):

    NTD2955

  • 功能描述:

    MOSFET -60V -12A P-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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