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NTE384中文資料NTE數(shù)據(jù)手冊(cè)PDF規(guī)格書

NTE384
廠商型號(hào)

NTE384

功能描述

Silicon NPN Transistor High Voltage Power Amp/Switch

文件大小

22.53 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 NTE Electronics
企業(yè)簡(jiǎn)稱

NTE

中文名稱

NTE Electronics官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-2-2 14:14:00

NTE384規(guī)格書詳情

Description:

The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.

The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.

Features:

? Maximum Safe–Area–of–Operation

? Low Saturation Voltages

? High Voltage Rating: VCER(sus) = 375V

? High Dissipation Rating: PT = 45W

產(chǎn)品屬性

  • 型號(hào):

    NTE384

  • 制造商:

    NTE Electronics

  • 功能描述:

    T-NPN SI SW LINEAR APP

  • 功能描述:

    BIPOLAR TRANSISTOR NPN 350V

  • 功能描述:

    BIPOLAR TRANSISTOR, NPN, 350V

  • 功能描述:

    T-NPN-SI-SW LINEAR APP

  • 功能描述:

    BIPOLAR TRANSISTOR, NPN, 350V; Transistor

  • Polarity:

    NPN; Collector Emitter Voltage

  • V(br)ceo:

    350V; Power Dissipation

  • Pd:

    45W; DC Collector

  • Current:

    7A; DC Current Gain

  • hFE:

    28; Operating Temperature

  • Min:

    -65C; No. of

  • Pins:

    2 ;RoHS

  • Compliant:

    Yes

  • 功能描述:

    Trans GP BJT NPN 350V 7A 2-Pin(2+Tab) TO-66

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