RM12N100S8中文資料RECTRON數(shù)據(jù)手冊PDF規(guī)格書

Description

The RM12N100S8 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of RDS(ON) and Qg. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

VDS =100V,ID =12A

RDS(ON)=8mΩ (typical) @ VGS=10V

RDS(ON)=11mΩ (typical) @ VGS=4.5V

Excellent gate charge x RDS(on) product(FOM)

Very low on-resistance RDS(on)

150 °C operating temperature

Pb-free lead plating

100% UIS tested

Application

DC/DC Converter

Ideal for high-frequency switching and

synchronous rectification

Halogen-free