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RMM2080中文資料ETC數(shù)據(jù)手冊PDF規(guī)格書

RMM2080
廠商型號

RMM2080

功能描述

2-18 GHz Wideband Variable-Gain Driver Amplifier

文件大小

479.76 Kbytes

頁面數(shù)量

4

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企業(yè)簡稱

ETC

中文名稱

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原廠標(biāo)識
數(shù)據(jù)手冊

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更新時間

2025-2-27 11:00:00

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RMM2080規(guī)格書詳情

[Raytheon RF Components]

Description

The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-μm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125μm & 4x250μm). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500μm). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.

Features

◆ 2-18 GHz Bandwidth

◆ 24 dB Typical Gain

◆ ±2 dB Gain Flatness

◆ 20 dBm Output Power Typical

◆ Three Stages of Distributed Amplification

◆ Gain Control of up to 70 dB range

◆ Dual-Gate Ion-Implanted 0.5 μm FETs

◆ Chip Size: 4.14mm x 3.22mm x 0.1mm

產(chǎn)品屬性

  • 型號:

    RMM2080

  • 功能描述:

    2-18 GHz Wideband Variable-Gain Driver Amplifier

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
RAYTHEON
23+
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CTIS
23+
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ON
SOT223
68500
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RAYTHEON
24+
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5000
只做原裝公司現(xiàn)貨
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Hammond
2020+
N/A
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加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
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RAYTHEON
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
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CTIS
24+
QFP
6868
原裝現(xiàn)貨,可開13%稅票
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Hammond
22+
NA
155
加我QQ或微信咨詢更多詳細(xì)信息,
詢價