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SGR6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedsw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGS6N60

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGS6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGS6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature.. Features ?Highspeed

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW6N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedswi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW6N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SiHFIB6N60A

VishaySiliconix

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSF6N60G

AdvancedMOSFETprocesstechnology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

SSF6N60G

600VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

SSH6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSM6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSP6N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSP6N60

N-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

SSQ6N60

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSS6N60

N-Channel650V(D-S)SuperJunctionPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SSS6N60

NCHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

STP6N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SVF6N60D

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SGP6N60UFTU

  • 功能描述：

    IGBT 晶體管

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
23+
QFP-40
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
時(shí)科
22+
SOD-323FL
30000
原裝正品現(xiàn)貨
 詢價(jià)
TI/德州儀器
23+
SOP8
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
BYchip/百域芯
21+
SOD-323FL
30000
百域芯原廠出品 品質(zhì)保證 可開13點(diǎn)增值稅
 詢價(jià)
晶導(dǎo)微電子
21+
N/A
2500
進(jìn)口原裝,優(yōu)勢(shì)現(xiàn)貨
 詢價(jià)
SHIKUES(時(shí)科)
23+
SOD323G
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
JINGDAO/晶導(dǎo)微
2407+
SOD-323
10750
只有原裝!量大可以訂!一片起賣!
 詢價(jià)
晶導(dǎo)微電子
10
詢價(jià)
24+
N/A
47000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
JINGDAO
2023
SOD-323
2580
原廠代理渠道,正品保障
 詢價(jià)
更多SGP6N60UFTU供應(yīng)商 更新時(shí)間2025-1-12 11:09:00

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