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20N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP20N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice per

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPW20N60S5

iscN-ChannelMOSFETTransistor

·DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPB20N60S5

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPB20N60S5

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?QualifiedaccordingtoJEDEC0)fortargetapplications ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SPB20N60S5XT

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    TRANS MOSFET N-CH 600V 20A 3PIN TO-263 - Cut TR(SOS)

  • 制造商：

    Infineon Technologies

  • 功能描述：

    Infineon SPB20N60S5XT MOSFETs

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
INFINEON
22+23+
TO263
75502
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
INFINEON
22+
TO263
8000
終端可免費供樣,支持BOM配單
 詢價
INFINEON
23+
TO-263
7936
詢價
INFINEON
24+
P-TO263-3-2
8866
詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INFINE0N
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
20+
P-TO263-3-2
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
Infineon Technologies
21+
PG-TO263-3-2
1000
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
更多SPB20N60S5XT供應商 更新時間2025-2-26 15:00:00

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