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SPD14N05

SIPMOS Power Transistor

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

14N05

FastSwitching

FEATURES ?DrainCurrentID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=50V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max) ?FastSwitching APPLICATIONS ?Switchregulators ?Switchingconvertersmotordriversandrelaydrivers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

14N05L

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05L

60VN-ChannelMOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve ?175℃OperatingTemperature VDS(V)=60V ??RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

RFD14N05L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05LSM

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05LSM

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=14A@TC=25℃ DrainSourceVoltage-VDSS=50V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

RFD14N05LSM

60VN-ChannelMOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve ?175℃OperatingTemperature VDS(V)=60V ??RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

詳細參數(shù)

  • 型號：

    SPD14N05

  • 制造商：

    INFINEON

  • 制造商全稱：

    Infineon Technologies AG

  • 功能描述：

    SIPMOS Power Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
SOT-252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
INFINEON/英飛凌
24+
TO252-3
20000
只做原廠渠道 可追溯貨源
 詢價
INFINEON
24+
TO-252
2170
詢價
INFINE0N
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
1822+
TO252-3
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
INFINEON
18+
SOT-252
41200
原裝正品,現(xiàn)貨特價
 詢價
SIEMENS
2020+
SOT-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
infineon
24+
P-TO252
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
INFINEON/英飛凌
23+
TO-252D-PAK
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
INFINEON
1709+
TO-252/D-PAK
32500
普通
 詢價
更多SPD14N05供應(yīng)商 更新時間2024-12-26 14:00:00

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