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STI18N60M2

Marking：18N60M2；Package：I2PAK；N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

STMICROELECTRONICSSTMicroelectronics

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STI18N60M2

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個(gè) 描述：MOSFET N-CH 600V 9A I2PAK

STMICROELECTRONICSSTMicroelectronics

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18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB18N60M2

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF18N60M2

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF18N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon

STMICROELECTRONICSSTMicroelectronics

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STFH18N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFU18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    STI18N60M2

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)

  • 包裝：

    卷帶（TR）

  • 描述：

    MOSFET N-CH 600V 9A I2PAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STM
1809+
SMD
1675
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 詢價(jià)
22+
NA
3000
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 詢價(jià)
ST
22+
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
ST/意法
23+
TO-262
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
ST
15+
TO-262
1000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST/意法
2023+
TO-262
1000
一級(jí)代理優(yōu)勢(shì)現(xiàn)貨,全新正品直營店
 詢價(jià)
STMicroelectronics
2022+
-
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
ST
2405+
原廠封裝
50000
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83268996鄒小姐
 詢價(jià)
ST
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
更多STI18N60M2供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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