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TH58BYG3S0HBAI4集成電路（IC）的存儲器規(guī)格書PDF中文資料
| 廠商型號 |
TH58BYG3S0HBAI4 |
| 參數(shù)屬性 | TH58BYG3S0HBAI4 封裝/外殼為63-VFBGA；包裝為托盤；類別為集成電路（IC）的存儲器；產(chǎn)品描述：IC FLASH 8GBIT PARALLEL 63TFBGA |
| 功能描述 | 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM |
| 封裝外殼 | 63-VFBGA |
| 文件大小 |
2.57148 Mbytes |
| 頁面數(shù)量 |
54 頁 |
| 生產(chǎn)廠商 | Toshiba Semiconductor |
| 企業(yè)簡稱 |
TOSHIBA【東芝】 |
| 中文名稱 | 株式會社東芝官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-16 14:46:00 |
TH58BYG3S0HBAI4規(guī)格書詳情
DESCRIPTION
The TH58BYG3S0HBAI4 is a single 1.8V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register
and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit
(256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TH58BYG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
The TH58BYG3S0HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected
internally.
FEATURES
? Organization
x8
Memory cell array 4224 × 128K × 8 × 2
Register 4224 × 8
Page size 4224 bytes
Block size (256K + 8K) bytes
? Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read
? Mode control
Serial input/output
Command control
? Number of valid blocks
Min 4016 blocks
Max 4096 blocks
? Power supply
VCC = 1.7V to 1.95V
? Access time
Cell array to register 55 μs typ. (Single Page Read) / 90 μs typ. (Multi Page Read)
Read Cycle Time 25 ns min (CL=30pF)
? Program/Erase time
Auto Page Program 340 μs/page typ.
Auto Block Erase 3.5 ms/block typ.
? Operating current
Read (25 ns cycle) 30 mA max
Program (avg.) 30 mA max
Erase (avg.) 30 mA max
Standby 100 μA max
? Package
P-TFBGA63-0911-0.80CZ (Weight: 0.165 g typ.)
? 8bit ECC for each 528Byte is implemented on the chip.
產(chǎn)品屬性
- 產(chǎn)品編號：
TH58BYG3S0HBAI4
- 制造商：
Kioxia America, Inc.
- 類別：
集成電路（IC） > 存儲器
- 系列：
Benand?
- 包裝：
托盤
- 存儲器類型：
非易失
- 存儲器格式：
閃存
- 技術(shù)：
FLASH - NAND（SLC）
- 存儲容量：
8Gb（1G x 8）
- 存儲器接口：
并聯(lián)
- 寫周期時間 - 字，頁：
25ns
- 電壓 - 供電：
1.7V ~ 1.95V
- 工作溫度：
-40°C ~ 85°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
63-VFBGA
- 供應(yīng)商器件封裝：
63-TFBGA（9x11）
- 描述：
IC FLASH 8GBIT PARALLEL 63TFBGA
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
22+23+ |
TSOP |
32146 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
TOSHIBA |
23+ |
NA |
9 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理QQ1304306553 |
詢價 | ||
Toshiba Memory America, Inc. |
21+ |
BGA |
1000 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
TOSHIBA/東芝 |
19+ |
BGA |
16080 |
進(jìn)口原裝現(xiàn)貨 |
詢價 | ||
Kioxia America Inc. |
24+ |
63-VFBGA |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
KIOXIA |
24+ |
* |
2 |
C04-存儲器 |
詢價 | ||
Kioxia |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
TOSHIBA |
24+ |
FBGA |
35200 |
一級代理/放心采購 |
詢價 | ||
東芝 |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
TOSHIBA |
1426+ |
TSOP48 |
20 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |
