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23N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

23N50E

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

23N50E

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMH23N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FMH23N50E

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMH23N50ES

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMR23N50E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMR23N50ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

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20
全新原裝!優(yōu)勢(shì)庫(kù)存熱賣中!
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24+
TO-3PN
6000
原裝房間現(xiàn)貨可出樣品
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IXYS/艾賽斯
23+
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50000
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25+23+
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35359
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9852
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19+
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32000
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22+
6000
十年配單,只做原裝
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22+
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25000
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19+
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29
只做原裝正品
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TRINNO
23+
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11200
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更多TMAN23N50A供應(yīng)商 更新時(shí)間2025-4-26 16:20:00

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