首頁(yè) >TNETD5200GHK>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFET FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V APPLICATIONS ·SwitchingVoltageRegulators ·DC-DCconverter | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFETsSiliconN-channelMOS Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SPDTSwitchforSingle-bandandDual-band,802.11a/b/gSystems GeneralDescription TheTQS5200isahighpower,single-poledouble-throwswitchconfiguredforTX-RXorAntennaDiversityswitchingapplicationsfortheWLANmarket.Thedeviceexhibitsindustry-leadinginsertionloss,isolationandpowerhandling. ProductFeatures ?IntegratedSPDTSwitchfor | TriQuint TriQuint Semiconductor | TriQuint | ||
802.11a/b/gSingle/Dual-bandSPDTSwitch | TriQuint TriQuint Semiconductor | TriQuint | ||
802.11a/b/gSingle/Dual-bandSPDTSwitch | TriQuint TriQuint Semiconductor | TriQuint | ||
HighSpeedIREmittingDiodein?5mm(T–13/4)Package DESCRIPTION TSFF5210isaninfrared,870nmemittingdiodeinGaAlAsdoublehetero(DH)technologywithhighradiantpowerandhighspeed,moldedinaclear,untintedplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-13/4 ?Dimensions(inmm):?5 ?Leadswithstand-off ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA520.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Leadswithstand-off ?Peakwavelength:λp=875nm ?Highreliabilit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
GaAlAsInfraredEmittingDiodesin?5mm(T–13/4)Package Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighSpeedInfraredEmittingDiode,870nm,GaAlAsDoubleHetero Description TSHF5200isahighspeedinfraredlightemittingdiodeinGaAlAsonGaAlAsdoublehetero(DH)technology,moldedoncopperframe,inaclear,untintedplasticpackage. ThenewtechnologycombinesthehighspeedofDHGaAlAswiththeefficiencyofstandardGaAlAsandthelowforwardvo | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,950nm,GaAs DESCRIPTION TSUS5200isaninfrared,950nmemittingdiodeinGaAstechnologymoldedinablue-graytintedplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Leadswithstand-off ?Peakwavelength:λp=950nm ?Highreliability ?Angleofha | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
詳細(xì)參數(shù)
- 型號(hào):
TNETD5200GHK
- 制造商:
Texas Instruments
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TI |
11+ |
BGA |
8000 |
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng) |
詢價(jià) | ||
TI |
05+ |
原廠原裝 |
4683 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
TI |
16+ |
BGA |
1356 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
TI |
24+ |
QFP |
6868 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
TI |
2020+ |
BGA |
800 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
TI |
17+ |
QFP |
9800 |
全新原裝現(xiàn)貨 于小姐17621580780 同微信QQ2107571078 |
詢價(jià) | ||
TI |
23+ |
QFP |
2680 |
全新原裝假一賠十 |
詢價(jià) | ||
TI |
23+ |
BGA |
47 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
TI/德州儀器 |
2021+ |
BGA |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
TI |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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