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TPH5200FNH

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V APPLICATIONS ·SwitchingVoltageRegulators ·DC-DCconverter

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

TPH5200FNH

MOSFETsSiliconN-channelMOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPW5200FNH

MOSFETsSiliconN-channelMOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TQS5200

SPDTSwitchforSingle-bandandDual-band,802.11a/b/gSystems

GeneralDescription TheTQS5200isahighpower,single-poledouble-throwswitchconfiguredforTX-RXorAntennaDiversityswitchingapplicationsfortheWLANmarket.Thedeviceexhibitsindustry-leadinginsertionloss,isolationandpowerhandling. ProductFeatures ?IntegratedSPDTSwitchfor

TriQuint

TriQuint Semiconductor

TQS5200

802.11a/b/gSingle/Dual-bandSPDTSwitch

TriQuint

TriQuint Semiconductor

TQS5200-PCB

802.11a/b/gSingle/Dual-bandSPDTSwitch

TriQuint

TriQuint Semiconductor

TSFF5200

HighSpeedIREmittingDiodein?5mm(T–13/4)Package

DESCRIPTION TSFF5210isaninfrared,870nmemittingdiodeinGaAlAsdoublehetero(DH)technologywithhighradiantpowerandhighspeed,moldedinaclear,untintedplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-13/4 ?Dimensions(inmm):?5 ?Leadswithstand-off ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

DESCRIPTION TheTSHA520.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Leadswithstand-off ?Peakwavelength:λp=875nm ?Highreliabilit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode

Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

GaAlAsInfraredEmittingDiodesin?5mm(T–13/4)Package

Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHF5200

HighSpeedInfraredEmittingDiode,870nm,GaAlAsDoubleHetero

Description TSHF5200isahighspeedinfraredlightemittingdiodeinGaAlAsonGaAlAsdoublehetero(DH)technology,moldedoncopperframe,inaclear,untintedplasticpackage. ThenewtechnologycombinesthehighspeedofDHGaAlAswiththeefficiencyofstandardGaAlAsandthelowforwardvo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSUS5200

InfraredEmittingDiode,950nm,GaAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSUS5200

InfraredEmittingDiode,950nm,GaAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSUS5200

InfraredEmittingDiode,RoHSCompliant,950nm,GaAs

DESCRIPTION TSUS5200isaninfrared,950nmemittingdiodeinGaAstechnologymoldedinablue-graytintedplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Leadswithstand-off ?Peakwavelength:λp=950nm ?Highreliability ?Angleofha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSUS5200

InfraredEmittingDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSUS5200

InfraredEmittingDiode,950nm,GaAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TTC5200

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    TNETD5200GHK

  • 制造商:

    Texas Instruments

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TI
11+
BGA
8000
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng)
詢價(jià)
TI
05+
原廠原裝
4683
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
TI
16+
BGA
1356
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
TI
24+
QFP
6868
原裝現(xiàn)貨,可開(kāi)13%稅票
詢價(jià)
TI
2020+
BGA
800
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
TI
17+
QFP
9800
全新原裝現(xiàn)貨 于小姐17621580780 同微信QQ2107571078
詢價(jià)
TI
23+
QFP
2680
全新原裝假一賠十
詢價(jià)
TI
23+
BGA
47
原裝正品現(xiàn)貨
詢價(jià)
TI/德州儀器
2021+
BGA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
TI
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
更多TNETD5200GHK供應(yīng)商 更新時(shí)間2025-1-11 9:02:00