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UF5N15Z

5A, 150V N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UF5N15ZG-TN3-R

5A, 150V N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UF5N15ZG-TN3-T

5A, 150V N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UF5N15ZL-TN3-R

5A, 150V N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UF5N15ZL-TN3-R

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

UF5N15ZL-TN3-T

5A, 150V N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UF5N15ZL-TN3-T

N-Channel 150 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

EMBB5N15A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS150V RDSON(MAX.)250mΩ ID5A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FQB5N15

150VN-ChannelMOSFET

Features ?4.5A,500V,RDS(on)=1.8?@VGS=10V ?Lowgatecharge(typical13nC) ?LowCrss(typical8.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD5N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD5N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.3A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD5N15

N-ChannelQFET?MOSFET150V,4.3A,800m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD5N15TM

N-ChannelQFET?MOSFET150V,4.3A,800m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD5N15TM

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQI5N15

150VN-ChannelMOSFET

Features ?4.5A,500V,RDS(on)=1.8?@VGS=10V ?Lowgatecharge(typical13nC) ?LowCrss(typical8.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP5N15

150VN-CHANNELMOSFET

150VN-CHANNELMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF5N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU5N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU5N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.3A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KSMU5N15

150VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
UTC/友順
23+
TO-252
10000
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UTC/友順
2022+
TO-252
7500
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UTC/友順
23+
TO-252
6000
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UTC/友順
2022+
TO-252
30000
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UTC/友順
20+
TO-252
7500
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UTC
24+
TO-252
12300
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UTC/友順
23+
TO-252
11200
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UTC
20232024
TO252
6000
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DIODES/美臺(tái)
23+
QFN
15000
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SUNMATE(森美特)
2019+ROHS
R-6
66688
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更多UF5N15Z供應(yīng)商 更新時(shí)間2025-1-3 14:30:00