| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
V30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
V30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
V30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High efficiency operation FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 100V 30A TO220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
包裝：卷帶（TR） 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 30A 100V TO-220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
包裝：卷帶（TR） 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 30A 100V TO-220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
詳細(xì)參數(shù)
- 型號：
V30100SG
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-220 |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
1822+ |
TO-220 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
VISHAY |
21+ |
TO-220 |
6000 |
絕對原裝現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | ||
VISHAY/威世 |
24+ |
TO-220 |
16000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
VISHAY/威世 |
22+ |
TO-220 |
8880 |
原裝認(rèn)準(zhǔn)芯澤盛世！ |
詢價(jià) | ||
VISHAY |
22+ |
TO-220 |
8900 |
英瑞芯只做原裝正品!!! |
詢價(jià) |
相關(guān)規(guī)格書
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- V30DL50C-M3/I
- V30MLA0603H
- V30MLA0805LH
- V30MLA1210H
- V30MLA1210NH
- V3-1
- V3-1002
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- V321BA60
- V321DB40
- V321HB34
- V3-22
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- V3-23
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- V3-245
相關(guān)庫存
更多- V30120SG-E3/4W
- V301DHB34
- V30200C-E3/4W
- V30324-T1-E3
- V30D60CL-M3/I
- V30DL45BP-M3/I
- V30DM120C-M3/I
- V30MLA0603NH
- V30MLA0805LNH
- V30MLA1210H-CUTTAPE
- V30MLA1812NTX2538
- V3-1001
- V3-1003
- V3-101
- V3-1078
- V3-1119
- V3-1136-D8
- V3-119
- V312003-P
- V31201.5-P
- V3-129
- V3-15
- V3-19M
- V3207
- V320LA10P
- V320LA20APX1347
- V320LA40BP
- V320LA40CPX3181
- V320LA7
- V320LC40CP
- V320LS40BP
- V320LT20AP
- V320LT40BPX10X2855
- V320LT7P
- V320SM7
- V3213
- V3219
- V321DA40
- V321HA32
- V321HF34
- V3222
- V3228
- V3231
- V3-23-D8
- V325015
