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0402CS-22NXGLW中文資料恩智浦數(shù)據(jù)手冊PDF規(guī)格書

0402CS-22NXGLW
廠商型號

0402CS-22NXGLW

功能描述

Heterojunction Bipolar Transistor Technology (InGaP HBT)

文件大小

1.35533 Mbytes

頁面數(shù)量

28

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡稱

nxp恩智浦

中文名稱

恩智浦半導體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-2 10:09:00

0402CS-22NXGLW規(guī)格書詳情

Heterojunction Bipolar Transistor Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBeeR at operating voltages from 3 to 5 Volts.

? Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 74 mA

Features

? Frequency: 400-1000 MHz

? P1dB: 29.6 dBm @ 900 MHz

? Power Gain: 31.7 dB @ 900 MHz

? OIP3: 42 dBm @ 900 MHz

? Active Bias Control (adjustable externally)

? Single 3 to 5 V Supply

? Performs Well with Digital Predistortion Systems

? Single-ended Power Detector

? Cost-effective 12-pin, 3 mm QFN Surface Mount Package

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

產(chǎn)品屬性

  • 型號:

    0402CS-22NXGLW

  • 功能描述:

    固定電感器 RF Chip Inductor 22 nH 2 % 0.4 A

  • RoHS:

  • 制造商:

    AVX

  • 電感:

    10 uH

  • 容差:

    20 %

  • 最大直流電流:

    1 A

  • 最大直流電阻:

    0.075 Ohms

  • 工作溫度范圍:

    - 40 C to + 85 C

  • 自諧振頻率:

    38 MHz Q

  • 最小值:

    40

  • 尺寸:

    4.45 mm W x 6.6 mm L x 2.92 mm H

  • 屏蔽:

    Shielded

  • 端接類型:

    SMD/SMT

  • 封裝/箱體:

    6.6 mm x 4.45 mm

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免費送樣,賬期支持,原廠直供,沒有中間商賺差價
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