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07N65

N-Channel 6 50V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

07N65C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScompliant ?Quali

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AM07N65

MOSFET650V,7AN-CHANNEL

FEATURE ?RoHSCompliant ?RDS(ON),typ.=1.2Ω@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION ?Adaptor ?Charger ?SMPSStandbyPower

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB07N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
CET
2023+
TO-220
8700
原裝現貨
 詢價
INF進口原
17+
220-220F
6200
詢價
FUJ/富士
24+
TO-220F
5000
全現原裝公司現貨
 詢價
INF
20+
220-220F
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
FUJI
21+
TO-220
50
原裝現貨假一賠十
 詢價
INFINEON/英飛凌
23+
220-220F
50000
全新原裝正品現貨,支持訂貨
 詢價
17
24+
TO-220F
1706
原裝現貨假一賠十
 詢價
I
22+
TO-220
6000
十年配單,只做原裝
 詢價
FUJITSU/富士通
23+
TO220F
5000
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
I
23+
TO-220
6000
原裝正品，支持實單
 詢價
更多07N65供應商 更新時間2025-3-31 9:31:00

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